Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-09-04
2007-09-04
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S643000, C438S652000, C438S654000, C438S508000
Reexamination Certificate
active
11215951
ABSTRACT:
The invention is a chemically grown oxide layer which prevents dopant diffusion between semiconductor layers. The chemically grown oxide layer may be so thin that it does not form a barrier to electrical conduction, and thus may be formed within active devices such as diodes or bipolar transistors. Such a chemically grown oxide film is advantageously used to prevent dopant diffusion in a vertically oriented polysilicon diode formed in a monolithic three dimensional memory array.
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Eckert Victoria L.
Herner S. Brad
Dugan & Dugan PC
Le Dung A.
SanDisk 3D LLC
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