Ultra-uniform silicides in integrated circuit technology

Details Ultra-uniform silicides in integrated circuit technology Ultra-uniform silicides in integrated circuit technology

2006-02-28

2006-02-28

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S592000, C438S586000

Reexamination Certificate

active

07005376

ABSTRACT:
A method of forming and a structure of an integrated circuit are provided. A gate dielectric is formed on a semiconductor substrate, and a gate is formed over a gate dielectric on the semiconductor substrate. Source/drain junctions are formed in the semiconductor substrate. Ultra-uniform silicides are formed on the source/drain junctions, and a dielectric layer is deposited above the semiconductor substrate. Contacts are then formed in the dielectric layer to the ultra-uniform silicides.

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