Ultra-uniform silicide system in integrated circuit technology

Details Ultra-uniform silicide system in integrated circuit technology Ultra-uniform silicide system in integrated circuit technology

2007-12-11

2007-12-11

Dickey, Thomas (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S383000, C438S664000, C438S586000, C438S592000

Reexamination Certificate

active

11252493

ABSTRACT:
A structure of an integrated circuit is provided. A gate dielectric is formed on a semiconductor substrate, and a gate is formed over a gate dielectric on the semiconductor substrate. Source/drain junctions are formed in the semiconductor substrate. Ultra-uniform suicides are formed on the source/drain junctions, and a dielectric layer is deposited above the semiconductor substrate. Contacts are then formed in the dielectric layer to the ultra-uniform silicides.

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