Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-02-06
2007-02-06
Vu, Hung (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S656000, C438S687000
Reexamination Certificate
active
10188686
ABSTRACT:
The present invention is directed to an alpha-W layer which is employed in interconnect structures such as trench capacitors or damascene wiring levels as a diffusion barrier layer. The alpha-W layer is a single phased material that is formed by a low temperature/pressure chemical vapor deposition process using tungsten hexacarbonyl, W(CO)6, as the source material.
REFERENCES:
patent: 3639165 (1972-02-01), Rairden, III
patent: 4451503 (1984-05-01), Blum et al.
patent: 4505028 (1985-03-01), Kobayashi et al.
patent: 4619840 (1986-10-01), Goldman et al.
patent: 4817557 (1989-04-01), Diem et al.
patent: 4902645 (1990-02-01), Ohba
patent: 4926237 (1990-05-01), Sun et al.
patent: 5126825 (1992-06-01), Harada
patent: 5212400 (1993-05-01), Joshi
patent: 5232872 (1993-08-01), Ohba
patent: 5407852 (1995-04-01), Ghio et al.
patent: 5429989 (1995-07-01), Fiordalice et al.
patent: 5539230 (1996-07-01), Cronin
patent: 5693563 (1997-12-01), Teong
patent: 5789312 (1998-08-01), Buchanan et al.
patent: 5847462 (1998-12-01), Bandyopadhyay et al.
patent: 6271128 (2001-08-01), Tseng
patent: 2002/0102849 (2002-08-01), Yi et al.
patent: 2003/0042610 (2003-03-01), Kitada et al.
patent: 61 217 576 (1986-09-01), None
B. Davari, “Submicron Tungsten Gate Mosfet with 10 nm Gate Oxide”, VLSI Symposium, Japan (1987).
J.R. Creighton, “Non-Selective Tungsten Chemical-Vapor Deposition Using Tungsten Hexacarbonyl”, Deposition and Growth: Limits for Microelectronics, Anaheim, CA, USA, Nov. 3-5, 1987, ISSN 0094-243X, AIP Conference Proceedings, USA, pp. 192-201 (1988).
Jae Hyun Sone, et al., “Formation of Low Pressure Chemically Vapour Deposited W Thin Film on Silicon Dioxide for Gate Electrode Application”, Thin Solid Films, vol. 253, No. 1/02, pp. 377-381 (1994).
Hiromasa Noda, et al., “Tungsten Gate Technology for Quarter-Micron Application”, International Conference on Solid State Devices & Materials, pp. 225-227 (1995).
Hiromosa Noda, “Tungsten Gate Technology for Quarter-Micron Application”, Jpn. J. Appl. Phys, vol. 35, pp. 807-811 (1996).
K. E. Greenberg, “Abnormal-Glow-Discharge Deposition of Tungsten.”Appl. Phys. Lett.50 (16), Apr. 20, 1987, pp. 1050-1052.
Cohen Stephan Alan
McFeely Fenton Read
Noyan Cevdet Ismail
Rodbell Kenneth Parker
Rosenberg Robert
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
Vu Hung
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