Ultra-thin silicon-on-insulator and...

Details Ultra-thin silicon-on-insulator and... Ultra-thin silicon-on-insulator and...

2006-08-29

2006-08-29

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S354000, C257S401000

Reexamination Certificate

active

07098508

ABSTRACT:
The invention provides integrated semiconductor devices that are formed upon an SOI substrate having different crystal orientations that provide optimal performance for a specific device. Specifically, an integrated semiconductor structure including at least an SOI substrate having a top semiconductor layer of a first crystallographic orientation and a semiconductor material of a second crystallographic orientation, wherein the semiconductor material is substantially coplanar and of substantially the same thickness as that of the top semiconductor layer and the first crystallographic orientation is different from the second crystallographic orientation is provided. The SOI substrate is formed by forming an opening into a structure that includes at least a first semiconductor layer and a second semiconductor layer that have different crystal orientations. The opening extends to the first semiconductor layer. A semiconductor material is epitaxial grown in the opening and then various etching and etch back processing steps are used in forming the SOI substrate.

REFERENCES:
patent: 4933298 (1990-06-01), Hasegawa
patent: 6603156 (2003-08-01), Rim
patent: 6858488 (2005-02-01), Dokumaci et al.
patent: 6902962 (2005-06-01), Yeo et al.
patent: 6903384 (2005-06-01), Hsu et al.
patent: 6911379 (2005-06-01), Yeo et al.
patent: 2004/0150042 (2004-08-01), Yeo et al.

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