Ultra thin silicon on insulator

Details Ultra thin silicon on insulator Ultra thin silicon on insulator

2009-08-04

2010-12-28

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257SE21430, C257SE21704, C438S300000, C438S763000

Reexamination Certificate

active

07859060

ABSTRACT:
In one embodiment, the invention is a method and apparatus for fabricating an ultra thin silicon on insulator. One embodiment of a method for fabricating an ultra thin silicon on insulator includes providing a silicon layer, saturating the silicon layer with at least one reactant gas at a first temperature, the first temperature being low enough to substantially prevent the occurrence of any reactions involving the reactant gas, and raising the first temperature to a second temperature, the second temperature being approximately a dissociation temperature of the reactant gas.

REFERENCES:
patent: 5973363 (1999-10-01), Staab et al.
patent: 7468311 (2008-12-01), Dip et al.
patent: 2005/0218395 (2005-10-01), Kim et al.

Affiliated with

Also associated with

Rating

Ultra thin silicon on insulator does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ultra thin silicon on insulator, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ultra thin silicon on insulator will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4194072