Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-11
2006-07-11
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S507000, C257SE27010
Reexamination Certificate
active
07075150
ABSTRACT:
The present invention provides a thin channel MOSFET having low external resistance. In broad terms, a silicon-on-insulator structure comprising a SOI layer located atop a buried insulating layer, said SOI layer having a channel region which is thinned by the presence of an underlying localized oxide region that is located on top of and in contact with said buried insulating layer; and a gate region located atop said SOI layer, wherein said localized oxide region is self-aligned with the gate region. A method for forming the inventive MOSFET is also provided comprising forming a dummy gate region atop a substrate; implanting oxide forming dopant through said dummy gate to create a localized oxide region in a portion of the substrate aligned to the dummy gate region that thins a channel region; forming source/drain extension regions abutting said channel region; and replacing the dummy gate with a gate conductor.
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Boyd Diane C.
Doris Bruce B.
Ieong Meikei
Sadana Devendra K.
Quach T. N.
Scull, Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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