Ultra-thin semiconductors bonded on glass substrates

Details Ultra-thin semiconductors bonded on glass substrates Ultra-thin semiconductors bonded on glass substrates

2007-09-18

2007-09-18

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S350000, C257S351000, C257SE21320, C257SE21561, C257SE21112, C438S149000

Reexamination Certificate

active

10931553

ABSTRACT:
A method for forming a semiconductor on insulator structure includes providing a glass substrate, providing a semiconductor wafer, and performing a bonding cut process on the semiconductor wafer and the glass substrate to provide a thin semiconductor layer bonded to the glass substrate. The thin semiconductor layer is formed to a thickness such that it does not yield due to temperature-induced strain at device processing temperatures. An ultra-thin silicon layer bonded to a glass substrate, selected from a group consisting of a fused silica substrate, a fused quartz substrate, and a borosilicate glass substrate, provides a silicon on insulator wafer in which circuitry for electronic devices is fabricated.

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