Ultra-thin resist and silicon/oxide hard mask for metal etch

Details Ultra-thin resist and silicon/oxide hard mask for metal etch Ultra-thin resist and silicon/oxide hard mask for metal etch

1998-12-02

2000-12-05

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438738, 438742, H01L 2144, H01L 21302, H01L 21461

Patent

active

061566586

ABSTRACT:
In one embodiment, the present invention relates to a method of forming a metal line, involving the steps of providing a semiconductor substrate comprising a metal layer, an oxide layer over the metal layer, and a silicon layer over the oxide layer; depositing an ultra-thin photoresist over the silicon layer, the ultra-thin photoresist having a thickness less than about 2,000 .ANG.; irradiating the ultra-thin photoresist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin photoresist exposing a portion of the silicon layer; etching the exposed portion of the silicon layer exposing a portion of the oxide layer; etching the exposed portion of the oxide layer exposing a portion of the metal layer; and etching the exposed portion of the metal layer thereby forming the metal line.

REFERENCES:
patent: 5219788 (1993-06-01), Abernathey et al.
Vaidya, et al. "Extreme ultraviolet lithography for 0.1 micrometer devices" IEEE Symposium on VLSI Technology, Systems, and Applications, pp. 127-130, Jun. 1999.
Stulen, "13-nm extreme ultraviolet lithography" IEEE, Quantum Electronics, vol. 1(3), pp. 970-975, Sep. 1995.

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