Ultra-thin oxide for semiconductors

Details Ultra-thin oxide for semiconductors Ultra-thin oxide for semiconductors

1998-03-25

2000-11-07

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257532, 438151, 438239, 438585, H01L 2972

Patent

active

061440639

ABSTRACT:
A semiconductor device having a transistor or capacitor with an ultra-thin oxide, which is thinner than 10 angstrom in thickness, is manufactured by eliminating a gate oxidation step in the processing and using the polysilicon reoxidation step to create the ultra-thin gate oxide by diffusion after formation of the gate.

REFERENCES:
patent: 6054735 (2000-04-01), Ngo

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