Ultra-thin gate oxide through post decoupled plasma...

Details Ultra-thin gate oxide through post decoupled plasma... Ultra-thin gate oxide through post decoupled plasma...

2007-02-13

2007-02-13

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S724000, C438S762000, C438S763000, C438S775000, C438S777000, C257SE21193, C257SE21625

Reexamination Certificate

active

10091983

ABSTRACT:
DPN (decoupled plasma nitridation) is used to improve robustness of ultra thin gate oxides. Conventionally, this is followed by an anneal in pure helium to remove structural defects in the oxide. However, annealing under these conditions has been found to cause a deterioration of the electrical performance of devices. This problem has been overcome by annealing, in a 1:4 oxygen-nitrogen mixture (1,050° C. at about 10 torr) instead of in helium or nitrogen oxide. This results in a gate oxide that is resistant to boron contamination without suffering any loss in its electrical properties.

REFERENCES:
patent: 5436481 (1995-07-01), Egawa et al.
patent: 5861329 (1999-01-01), Yeh et al.
patent: 6136654 (2000-10-01), Kraft et al.
patent: 6140187 (2000-10-01), DeBusk et al.
patent: 6162717 (2000-12-01), Yeh
patent: 6225169 (2001-05-01), Chew et al.
patent: 6342437 (2002-01-01), Moore
patent: 6376316 (2002-04-01), Shukuri et al.
patent: 6413881 (2002-07-01), Aronowitz et al.
patent: 6426305 (2002-07-01), Chou et al.
patent: 6632740 (2003-10-01), Bertrand et al.
patent: 2003/0153149 (2003-08-01), Dong et al.
patent: 2003/0157771 (2003-08-01), Luoh et al.
“Ultrathin nitrogen-profile engineered gate dielectric film”, by S.V. Hattangady et al., IEDM 96-495, 1996 IEEE, 19.1.1 to 19.1.4.
“Plasma nitridation of very thin gate dielectrics,” Elsevier Science, B.V. 2001, by H.N. Al-Shereef et al., Microelectronic Engineering 59(2001), pp. 317-322.

Affiliated with

Also associated with

Rating

Ultra-thin gate oxide through post decoupled plasma... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ultra-thin gate oxide through post decoupled plasma..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ultra-thin gate oxide through post decoupled plasma... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3865694