Ultra thin channel MOSFET

Details Ultra thin channel MOSFET Ultra thin channel MOSFET

2005-07-05

2005-07-05

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000

Reexamination Certificate

active

06914303

ABSTRACT:
Described is a method for making thin channel silicon-on-insulator structures. The inventive method comprises forming a set of thin spacer abutting a gate region in a first device and a second device region; forming a raised source/drain region on either side of the gate region in the first device region and the second device region, implanting dopants of a first conductivity type into the raised source drain region in the first device region to form a first dopant impurity region, where the second device region is protected by a second device region block mask; implanting dopants of a second conductivity type into the raised source/drain region in the second device region to form a second dopant impurity region, where the first device region is protected by a first device region block mask; and activating the first dopant impurity region and the second dopant impurity region to provide a thin channel MOSFET.

REFERENCES:
patent: 6287924 (2001-09-01), Chao et al.
patent: 6329704 (2001-12-01), Akatsu et al.
patent: 6501134 (2002-12-01), Krivokapic
patent: 6812105 (2004-11-01), Dokumaci et al.

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