Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2007-05-07
2010-11-23
Cao, Phat X (Department: 2813)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S459000, C257SE21088
Reexamination Certificate
active
07838391
ABSTRACT:
A semiconductor device begins with a wafer having a plurality of bumps formed on a surface of the wafer. An under-film layer is formed over the wafer to completely cover all portions of the bumps with the under-film layer. An adhesive layer is formed over the under-film layer. A support layer is attached over the adhesive layer. A back surface of the wafer undergoes grinding. The support layer provides structural support to the wafer. The support layer is removed to expose the adhesive layer. The adhesive layer is removed to expose the under-film layer. The wafer is singulated into semiconductor die. The semiconductor die is mounted to a substrate by applying force to a back surface of the semiconductor die to press the bumps through under-film layer to contact the substrate while the under-film layer provides an underfill between the semiconductor die and substrate.
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Lee Sang-ho
Lee Sungyoon
Shin Junghoon
Atkins Robert D.
Cao Phat X
Doan Nga
STATS ChipPAC Ltd.
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