Ultra thin body fully-depleted SOI MOSFETs

Details Ultra thin body fully-depleted SOI MOSFETs Ultra thin body fully-depleted SOI MOSFETs

2006-06-23

2008-12-02

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S368000, C257S369000, C257S327000, C257SE29117

Reexamination Certificate

active

07459752

ABSTRACT:
Ultra thin body fully-depleted silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect-transistors (MOSFETs) in which the SOI thickness changes with gate-length variations thereby minimizing the threshold voltage variations that are typically caused by SOI thickness and gate-length variations are provided. Such a SOI MOSFET may include a SOI substrate having a SOI layer in which a first portion thereof has a thickness of less than 20 nm; a gate including a gate dielectric and a gate electrode located atop the first portion of the SOI layer having the thickness, the gate electrode having an upper surface and a bottom surface that have the same length or the bottom surface has a length that is greater than the upper surface; and source and drain diffusion regions located in a second portion of the SOI layer that is adjacent to the first portion, and the second portion of the SOI layer is thicker than the first portion.

REFERENCES:
patent: 5019882 (1991-05-01), Solomon et al.
patent: 5192697 (1993-03-01), Leong
patent: 5413950 (1995-05-01), Chen et al.
patent: 5999056 (1999-12-01), Fong
patent: 6025267 (2000-02-01), Pey et al.
patent: 6271133 (2001-08-01), Lim et al.
patent: 6333247 (2001-12-01), Chan et al.
patent: 6335253 (2002-01-01), Chong et al.
patent: 6339002 (2002-01-01), Chan et al.
patent: 6365446 (2002-04-01), Chong et al.
patent: 6372557 (2002-04-01), Leong
patent: 6509221 (2003-01-01), Doris et al.
patent: 6509234 (2003-01-01), Krivokapic
patent: 6531365 (2003-03-01), Dokumaci et al.
patent: 6534388 (2003-03-01), Lin et al.
patent: 6555880 (2003-04-01), Cabral, Jr. et al.
patent: 6580132 (2003-06-01), Chan et al.
patent: 6586289 (2003-07-01), Dokumaci et al.
patent: 6603181 (2003-08-01), Solomon et al.
patent: 6624489 (2003-09-01), Chong et al.
patent: 6645861 (2003-11-01), Cabral, Jr. et al.
patent: 6716708 (2004-04-01), Cabral, Jr. et al.
patent: 6841831 (2005-01-01), Hanafi et al.
patent: 2002/0022366 (2002-02-01), Cabral, Jr. et al.
patent: 2002/0024058 (2002-02-01), Marshall et al.
patent: 2002/0031909 (2002-03-01), Cabral, Jr. et al.
patent: 2002/0042183 (2002-04-01), Chan et al.
patent: 2002/0094643 (2002-07-01), Solomon et al.
patent: 2002/0098689 (2002-07-01), Chong et al.
patent: 2002/0155690 (2002-10-01), Cabral, Jr. et al.
patent: 2002/0185691 (2002-12-01), Cabral, Jr. et al.
patent: 2002/0197839 (2002-12-01), Dokumaci et al.
patent: 2003/0132487 (2003-07-01), Cabral, Jr. et al.
patent: 2003/0132492 (2003-07-01), Solomon et al.
patent: 2003/0162388 (2003-08-01), Dokumaci et al.
patent: 2004/0094804 (2004-05-01), Amos et al.
patent: 2004/0108598 (2004-06-01), Cabral, Jr. et al.

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