Ultra-shallow p-type junction having reduced sheet resistance an

Details Ultra-shallow p-type junction having reduced sheet resistance an Ultra-shallow p-type junction having reduced sheet resistance an

1998-03-27

2000-05-16

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438199, 438228, 438231, 438232, 438301, 438306, 438528, 438918, H01L 21336

Patent

active

060636823

ABSTRACT:
A method of fabricating a transistor is provided. According to the method, a heavy ion is implanted into a silicon substrate so as to amorphize at least a portion of the silicon substrate. The amorphized silicon is substantially free of channels. A dopant is subsequently implanted into the amorphized silicon, and the amorphized silicon substantially contains the implanted dopant. Thereafter, a silicon implanting step is performed to create an excess of vacancies to interstitials within a predetermined range. Enhanced diffusion of the dopant within the predetermined range is mitigated because of the excess of vacancies to interstitials within this predetermined range.

REFERENCES:
patent: 5036019 (1991-07-01), Yamane et al.
patent: 5296401 (1994-03-01), Mitsui et al.
patent: 5360749 (1994-11-01), Anjum et al.
patent: 5470794 (1995-11-01), Anjum et al.
patent: 5541131 (1996-07-01), Yoo et al.
patent: 5767557 (1998-06-01), Kizilyalli
patent: 5821147 (1998-10-01), Kizilyalli
patent: 5899732 (1999-05-01), Gardner et al.

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