Ultra shallow junction formation using amorphous silicon layer

Details Ultra shallow junction formation using amorphous silicon layer Ultra shallow junction formation using amorphous silicon layer

1996-10-04

1999-12-28

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438528, H01L 21336

Patent

active

060080981

ABSTRACT:
A method of achieving shallow junctions in a semiconductor device is achieved by providing an amorphous silicon layer over an epitaxial layer, implanting ions into the amorphous silicon layer, and annealing the resulting device to recrystallize the amorphous silicon layer and drive in the implanted ions to a shallow depth less than the depth of the amorphous silicon layer.

REFERENCES:
patent: 4683645 (1987-08-01), Naguib et al.
patent: 5393687 (1995-02-01), Liang
patent: 5585286 (1996-12-01), Aronowitz et al.
patent: 5610088 (1997-03-01), Chang et al.

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