Ultra shallow junction formation by solid phase diffusion

Details Ultra shallow junction formation by solid phase diffusion Ultra shallow junction formation by solid phase diffusion

2005-10-24

2010-06-01

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S249000, C438S392000, C438S358000, C438S369000, C257SE21211, C257SE21466, C257SE21468

Reexamination Certificate

active

07727845

ABSTRACT:
An ultra shallow junction (USJ) FET device and method for forming the same with improved control over SDE or LDD doped region interfaces to improve device performance and reliability is provided, the method including providing a semiconductor substrate; forming a gate structure comprising a gate dielectric, an overlying gate electrode, and first offset spacers adjacent either side of the gate electrode; forming at least one doped semiconductor layer comprising dopants over a respective source and drain region adjacent the respective first offset spacers; forming second offset spacers adjacent the respective first offset spacers; and, thermally treating the at least one semiconductor layer to cause out-diffusion of the dopants to form doped regions in the semiconductor substrate.

REFERENCES:
patent: 2001/0039094 (2001-11-01), Wristers et al.
patent: 2004/0072446 (2004-04-01), Liu et al.
patent: 2005/0093075 (2005-05-01), Bentum et al.

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