Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-16
2008-11-18
Hoang, Quoc D (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S138000, C257SE27096, C257SE21410, C257SE21629
Reexamination Certificate
active
07453113
ABSTRACT:
A method for forming and the structure of a strained vertical channel of a field effect transistor, a field effect transistor and CMOS circuitry is described incorporating a drain, body and source region on a sidewall of a vertical single crystal semiconductor structure wherein a hetero-junction is formed between the source and body of the transistor, wherein the source region and channel are independently lattice strained with respect to the body region and wherein the drain region contains a carbon doped region to prevent the diffusion of dopants (boron) into the body. The invention reduces the problem of leakage current from the source region via the hetero-junction and lattice strain while independently permitting lattice strain in the channel region for increased mobility via choice of the semiconductor materials.
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Kogyo, Nikkan, paragraph of “Heterojunction” in Dictionary of Semiconductor Terms, by Japan editorial committee of “Dictionary of Semiconductor Terms,” Shinnbun, Mar. 20, 1999 and English translation thereof.
Chu Jack Oon
Ouyang Qiqing Christine
Hoang Quoc D
International Business Machines - Corporation
McGinn IP Law Group PLLC
Trepp, Esq. Robert
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