Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-17
2007-04-17
Hoang, Quoc (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S302000
Reexamination Certificate
active
10463038
ABSTRACT:
A method for forming and the structure of a strained vertical channel of a field effect transistor, a field effect transistor and CMOS circuitry is described incorporating a drain, body and source region on a sidewall of a vertical single crystal semiconductor structure wherein a heterojunction is formed between the source and body of the transistor, wherein the source region and channel are independently lattice strained with respect to the body region and wherein the drain region contains a carbon doped region to prevent the diffusion of dopants (boron) into the body. The invention reduces the problem of leakage current from the source region via the heterojunction and lattice strain while independently permitting lattice strain in the channel region for increased mobility via choice of the semiconductor materials.
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Chu Jack Oon
Ouyang Qiqing Christine
Hoang Quoc
International Business Machines - Corporation
Trepp Robert M.
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