Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2004-10-13
2009-02-17
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S623000, C438S781000, C438S790000, C257SE21273, C257SE21277
Reexamination Certificate
active
07491658
ABSTRACT:
A method for fabricating a SiCOH dielectric material comprising Si, C, O and H atoms from a single organosilicon precursor with a built-in organic porogen is provided. The single organosilicon precursor with a built-in organic porogen is selected from silane (SiH4) derivatives having the molecular formula SiRR1R2R3, disiloxane derivatives having the molecular formula R4R5R6—Si—O—Si—R7R8R9, and trisiloxane derivatives having the molecular formula R10R11R12—Si—O—Si—R13R14—O—Si—R15R16R17where R and R1-17may or may not be identical and are selected from H, alkyl, alkoxy, epoxy, phenyl, vinyl, allyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents. In addition to the method, the present application also provides SiCOH dielectrics made from the inventive method as well as electronic structures that contain the same.
REFERENCES:
patent: 2005/0196974 (2005-09-01), Weigel et al.
patent: 2005/0230834 (2005-10-01), Schmitt et al.
patent: 2006/0006140 (2006-01-01), Lakshmanan et al.
patent: 2006/0151884 (2006-07-01), Hara et al.
Gates Stephen McConnell
Grill Alfred
Neumayer Deborah A.
Nguyen Son Van
Fourson George
International Business Machines - Corporation
Maldonado Julio J.
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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