Field effect semiconductor diodes and processing techniques

Details Field effect semiconductor diodes and processing techniques Field effect semiconductor diodes and processing techniques

2007-03-22

2009-11-10

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000

Reexamination Certificate

active

07615812

ABSTRACT:
Field effect semiconductor diodes and improved processing techniques for forming the field effect semiconductor diodes having semiconductor layers forming a source, a body and a drain of a field effect device, the semiconductor layers forming pedestals having an insulating layer and a gate on sides thereof vertically spanning the body and a part of the source and drain layers, and a conductive contact layer over the pedestals making electrical contact with the drain and the gate, the conductive layer being in contact with the body at least one position on each pedestal. The conductive layer may be in contact with the body through at least one opening in the source layer, or the source layer may be a discontinuous doped layer, the body layer extending between the discontinuous doped layer forming the source layer to be in electrical contact with the conductive layer. Other aspects and variations of the invention are disclosed.

REFERENCES:
patent: 6537921 (2003-03-01), Metzler
patent: 6974720 (2005-12-01), Sumakeris et al.
patent: 7323745 (2008-01-01), Kinzer
patent: 7420246 (2008-09-01), Ozoe et al.

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