Ultra low k plasma CVD nanotube/spin-on dielectrics with...

Details Ultra low k plasma CVD nanotube/spin-on dielectrics with... Ultra low k plasma CVD nanotube/spin-on dielectrics with...

2006-01-10

2006-01-10

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000, C257S750000, C257S758000

Reexamination Certificate

active

06984579

ABSTRACT:
A method for forming a conductive feature in a low k dielectric layer comprising a layer of nanotubes and a low k material between the nanotubes is provided. The low k dielectric layer may be deposited on a seed layer as a blanket layer that is patterned such that a conductive feature may be formed in the low k dielectric layer. Alternatively, the low k dielectric layer may be selectively deposited on a patterned seed layer between a sacrificial layer of a substrate. The sacrificial layer may be removed and replaced with conductive material to form a conductive feature in the low k dielectric layer.

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