Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-06
2007-11-06
Smith, Bradley K. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
10751740
ABSTRACT:
A three-dimensional solid-state memory is formed from a plurality of bit lines, a plurality of layers, a plurality of tree structures and a plurality of plate lines. Bit lines extend in a first direction in a first plane. Each layer includes an array of memory cells, such as ferroelectric or hysteretic-resistor memory cells. Each tree structure corresponds to a bit line, has a trunk portion and at least one branch portion. The trunk portion of each tree structure extends from a corresponding bit line, and each tree structure corresponds to a plurality of layers. Each branch portion corresponds to at least one layer and extends from the trunk portion of a tree structure. Plate lines correspond to at least one layer and overlap the branch portion of each tree structure in at least one row of tree structures at a plurality of intersection regions.
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Curtin Joseph P.
Gold Darren
Hitachi Global Storage Technologies - Netherlands B.V.
Smith Bradley K.
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