Ultra-high capacitance device based on nanostructures

Details Ultra-high capacitance device based on nanostructures Ultra-high capacitance device based on nanostructures

2006-08-15

2006-08-15

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S398000, C438S399000, C977S700000, C977S902000, C977S963000

Reexamination Certificate

active

07091084

ABSTRACT:
The present invention discloses a method including providing a substrate; forming a lower conductor over the substrate; forming a conducting nanostructure over the lower conductor; forming a thin dielectric over the conducting nanostructure; and forming an upper conductor over the thin dielectric.The present invention further discloses a device including a substrate; a lower conductor located over the substrate; a conducting nanostructure located over the lower conductor; a thin dielectric located over the conducting nanostructure; and an upper conductor located over the thin dielectric.

REFERENCES:
patent: 5493140 (1996-02-01), Iguachi
patent: 5650351 (1997-07-01), Wu
patent: 5731538 (1998-03-01), O'Brien et al.
patent: 5742471 (1998-04-01), Barbee, Jr. et al.
patent: 5777977 (1998-07-01), Fujiwara et al.
patent: 6077573 (2000-06-01), Kim et al.
patent: 6271076 (2001-08-01), Laibowitz et al.
patent: 6504292 (2003-01-01), Choi et al.
patent: 6573547 (2003-06-01), Ahn et al.
patent: 6599808 (2003-07-01), Kim et al.
patent: 6667072 (2003-12-01), Shuy et al.
patent: 6768574 (2004-07-01), Bertran Serra et al.
patent: 2002/0000593 (2002-01-01), Nishiyama et al.
patent: 2003/0118738 (2003-06-01), Shuy et al.
patent: 2003/0171257 (2003-09-01), Sliroi et al.

Affiliated with

Also associated with

Rating

Ultra-high capacitance device based on nanostructures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ultra-high capacitance device based on nanostructures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ultra-high capacitance device based on nanostructures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3711414