Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Patent
1998-08-21
2000-05-30
Niebling, John F.
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
438308, 438663, H01L 2126, H01L 21336, H01L 2144
Patent
active
06069095&
ABSTRACT:
A method of thermal processing of semiconductor wafers during device fabrication wherein there is provided a processing chamber for thermal processing of a semiconductor wafer having a component-containing surface and an opposing backside. A retainer is provided for retaining the wafer within the chamber whereby the wafer, when retained by the retainer, forms an enclosed space in the chamber with the backside. A wafer is retained in the chamber with the retainer and the wafer is heated. Concurrent with the heating of the wafer, the fluid content of the enclosed space is continually removed while the wafer is in the processing chamber. The fluid content of the space which was the enclosed space is continually removed while the wafer is removed from the chamber after completion of the heating cycle thereon. The continual removal of fluid content can comprise purging the enclosed space with a moving gas inert to the materials in the chamber or the application of a vacuum to the enclosed space. The vacuum can be formed by providing a Venturi. A gas inert to the materials in the chamber is also passed over the component-containing surface.
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Brady III Wade James
Ghyka Alexander G.
Niebling John F.
Telecky Jr. Frederick J.
Texas Instruments Incorporated
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