Two transistor NOR device

Details Two transistor NOR device Two transistor NOR device

2005-01-11

2005-01-11

Cho, James H. (Department: 2819)

Electronic digital logic circuitry

Function of and, or, nand, nor, or not

Field-effect transistor

C326S113000

Reexamination Certificate

active

06842048

ABSTRACT:
A NOR gate includes is constructed with two asymmetric FinFET type transistors instead of the conventional four-transistor NOR gate. The reduction in the number of transistors from four down to two allows for significant improvements in integrated semiconductor circuits.

REFERENCES:
patent: 5612563 (1997-03-01), Fitch et al.
patent: 6396108 (2002-05-01), Krivokapic et al.
patent: 6433609 (2002-08-01), Voldman
patent: 6462585 (2002-10-01), Bernstein et al.
patent: 6580293 (2003-06-01), Bernstein et al.
patent: 6583440 (2003-06-01), Yasukawa
patent: 20020113270 (2002-08-01), Bernstein et al.
Digh Hisamoto et al.: “FinFET—A Self-Aligned Double-Gate MOSFET Scalable to 20 nm,” IEEE Transactions on Electron Devices, vol. 47, No. 12, Dec. 2000, pp. 2320-2325.
Yang-Kyu Choi et al.: “Sub-20nm CMOS Fin FET Technologies,” 0-7803-5410-9/99 IEEE, Mar. 2001, 4 pages.
Xuejue Huang et al.: “Sub-50 nm P-Channel Fin FET,” IEEE Transactions on Electron Devices, vol. 48, No. 5, May 2001, pp. 880-886.
Yang-Kyu Choi et al.: “Nanoscale CMOS Spacer FinFET for the Terabit Era,” IEEE Electron Device Letters, vol. 23, No. 1, Jan. 2002, pp. 25-27.
Xuejue Huang et al.: “Sub 50-nm FinFET: PMOS,” 0-7803-7050-3/01 IEEE, Sep. 1999 4 pages.
Patent Abstracts of Japan, vol. 2000, No. 15, Apr. 6, 2001 & JP 2000 340795 A (Sony Corp.), Dec. 8, 2000.
Patent Abstracts of Japan, vol. 018, No. 684, Dec. 22, 1994 & JP 06 275826 A (Fujitsu Ltd.), Sep. 30, 1994.
Patent Abstracts of Japan, vol. 018, No. 461, Aug. 26, 1994 & JP 06 151738 A (Nippon Steel Corp.), May 31, 1994.
Tetsu Tanaka et al.: Ultrafast Operation of VTH-Adjusted p+-n+Double-Gate SOI MOSFET's,IEEE Electron Device Letters, vol. 15, No. 10, Oct. 1, 1994, pp. 386-388.

Affiliated with

Also associated with

Rating

Two transistor NOR device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Two transistor NOR device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Two transistor NOR device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3425025