Two transistor gain cell, method, and system

Details Two transistor gain cell, method, and system Two transistor gain cell, method, and system

2006-10-10

2006-10-10

Tran, Michael (Department: 2827)

Static information storage and retrieval

Read/write circuit

Precharge

C365S189110

Reexamination Certificate

active

07120072

ABSTRACT:
A two transistor memory cell includes a write transistor and a read transistor. When reading the memory cell, the read transistor is turned on, and a voltage develops on a read bit line.

REFERENCES:
patent: 5122986 (1992-06-01), Lim
patent: 6072713 (2000-06-01), McKenny et al.
patent: 6903990 (2005-06-01), Mizugaki
patent: 2004/0072583 (2004-04-01), Weng
Ikeda, N , et al., “A Novel Logic Compatible Gain Cell with two Transistors and one Capacitor”,Symposium on VLSI Technology Digest of Technical Papers, (2000), 168-169.

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