Two-terminal semiconductor diode arrangement

Details Two-terminal semiconductor diode arrangement Two-terminal semiconductor diode arrangement

1987-05-14

1989-01-24

James, Andrew J.

357 56, 357 81, 357 71, H01L 2336, H01L 2314, H01L 2184

Patent

active

048004200

ABSTRACT:
A two-terminal semiconductor diode device and method for manufacturing the same is disclosed. The semiconductor diode geometry is defined by mesa etching. An ohmic contact is disposed on the flat topped summit of the mesa and another ohmic contact in the shape of a ring is disposed on the bottom layer of the diode. A dielectric layer disposed over the diode has a via hole therethrough to make external contact to a metallic heat sink and ground. A substrate layer supports the semiconductor diode and has a second offset via hole therethrough to the ring contact for external circuit contact and biasing of the diode.
The offset via hole simplifies the manufacturing process. Additionally, the active area of the diode makes direct contact to the heat sink improving heat transfer from the device.

REFERENCES:
patent: 4127830 (1978-11-01), Chalifour et al.
patent: 4214255 (1980-07-01), Neilson
patent: 4315275 (1982-02-01), Bert et al.
patent: 4490735 (1984-12-01), Schwaderer
patent: 4499659 (1985-02-01), Varteresian et al.
patent: 4596069 (1986-06-01), Bayraktaroglu
patent: 4734749 (1988-03-01), Levi

Affiliated with

Also associated with

Rating

Two-terminal semiconductor diode arrangement does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Two-terminal semiconductor diode arrangement, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Two-terminal semiconductor diode arrangement will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-421805