Two step source/drain anneal to prevent dopant evaporation

Details Two step source/drain anneal to prevent dopant evaporation Two step source/drain anneal to prevent dopant evaporation

1996-12-30

1999-02-23

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438765, H01L 21336

Patent

active

058743448

ABSTRACT:
A two step source/drain annealing process which permits a dopant to be ion implanted directly into the silicon without a protective oxide. The gate oxide is removed before the ion implantation of the dopant occurs, thus the dopant is implanted directly into bare silicon. In a first step of the annealing process, a thin oxide is grown over the source and drain regions at a relatively low temperature (e.g., 600.degree. C.) this temperature to prevent the evaporation of the dopant from the silicon substrate and polysilicon gate. The second step of the annealing process occurs at a higher temperature allowing the dopant to be driven into the substrate forming the source and drain regions.

REFERENCES:
patent: 5525529 (1996-06-01), Guldi
Goodman, A.M. et al. "Thin Tunnelable Layers of Silicon Dioxide Formed by Oxidation of Silicon" J. Electrochem. Soc.: Electrochemical Technology vol. 117, No. 7 (1970) pp. 982-984.

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