Two step exposure to strengthen structure of polyimide or...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C438S725000, C438S746000, C438S780000

Reexamination Certificate

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06943124

ABSTRACT:
A method is provided for forming features in a polyimide layer that is employed as an insulating layer or buffer layer during the fabrication of semiconductor devices or chip packaging structures. A pattern is formed in a photosensitive layer that has a high film retention after the development step and a crosslinked network that strengthens and stabilizes it for subsequent processing. The process involves exposing a negative tone photosensitive layer with a first exposure dose that is less than the normal dose used to image the material. The exposed layer is developed to provide a scum free substrate. A second exposure dose then strengthens the formed image by crosslinking unreacted components. First and second exposure doses are determined from a plot of film thickness loss vs. exposure energy. The method applies to photosensitive polyimide precursors as well as negative photoresists that are crosslinked by free radical or chemical amplification mechanisms.

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