Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-09-13
2005-09-13
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S725000, C438S746000, C438S780000
Reexamination Certificate
active
06943124
ABSTRACT:
A method is provided for forming features in a polyimide layer that is employed as an insulating layer or buffer layer during the fabrication of semiconductor devices or chip packaging structures. A pattern is formed in a photosensitive layer that has a high film retention after the development step and a crosslinked network that strengthens and stabilizes it for subsequent processing. The process involves exposing a negative tone photosensitive layer with a first exposure dose that is less than the normal dose used to image the material. The exposed layer is developed to provide a scum free substrate. A second exposure dose then strengthens the formed image by crosslinking unreacted components. First and second exposure doses are determined from a plot of film thickness loss vs. exposure energy. The method applies to photosensitive polyimide precursors as well as negative photoresists that are crosslinked by free radical or chemical amplification mechanisms.
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Lan Ho-Ku
Lu Shin-Rung
Hogans David L.
Jr. Carl Whitehead
Taiwan Semiconductor Manufacturing Company
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