Two-step chemical mechanical polishing process for producing flu

Details Two-step chemical mechanical polishing process for producing flu Two-step chemical mechanical polishing process for producing flu

1992-01-24

1993-09-14

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156645, 156651, 437195, 437228, H01L 2100

Patent

active

052445348

ABSTRACT:
A method for forming conductive plugs within an insulation material is described. The inventive process results in a plug of a material such as tungsten which is more even with the insulation layer surface than conventional plug formation techniques. Conventional processes result in recessed plugs which are not easily or reliably coupled with subsequent layers of sputtered aluminum or other conductors. The inventive process uses a two-step chemical mechanical planarization technique. An insulation layer with contact holes is formed, and a metal layer is formed thereover. A polishing pad rotates against the wafer surface while a slurry selective to the metal removes the metal overlying the wafer surface, and also recesses the metal within the contact holes due to the chemical nature and fibrous element of the polishing pad. A second CMP step uses a slurry having an acid or base selective to the insulation material to remove the insulator from around the metal. The slurry also contains abrasive materials which polish the metal surface so as to make the metal level with the insulation layer surface. Removal of the insulation material can continue, thereby producing a slightly protruding plug which result sin a more reliable contact from the substrate to subsequent conductive layers.

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