Two-layer film and method of forming pattern with the same

Details Two-layer film and method of forming pattern with the same Two-layer film and method of forming pattern with the same

2007-07-24

2007-07-24

McPherson, John A. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S141000, C430S269000

Reexamination Certificate

active

10475096

ABSTRACT:
The invention concerns a lift-off process for patterning layers that are deposited and/or sputtered. The invention provides a two-layer resist and a patterning method using the resist. The patterning method can readily produce burr-free layers on a substrate.The method comprises the steps of:sequentially applying positive radiation-sensitive resin compositions 1 and 2 to form a two-layer laminate;subjecting the two-layer resist to single exposure and development to produce fine patterns having an undercut cross section;depositing and/or sputtering an organic or inorganic thin layer with use of the resist pattern as a mask; andlifting off the resist pattern to leave a pattern of the thin layer in desired shape.

REFERENCES:
patent: 4180604 (1979-12-01), Feng et al.
patent: 4571374 (1986-02-01), Vikesland
patent: 4596759 (1986-06-01), Schupp et al.
patent: 5942369 (1999-08-01), Ota et al.
patent: 5986851 (1999-11-01), Angelo et al.
patent: 6395449 (2002-05-01), Hurditch et al.
patent: 2001/0035343 (2001-11-01), Kamijima
patent: 2004/0192804 (2004-09-01), Kura et al.
patent: 7-98500 (1995-04-01), None

Affiliated with

Also associated with

Rating

Two-layer film and method of forming pattern with the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Two-layer film and method of forming pattern with the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Two-layer film and method of forming pattern with the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3771983