Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-05-31
2005-05-31
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S261000, C438S266000, C438S267000, C438S591000
Reexamination Certificate
active
06900098
ABSTRACT:
The invention proposes am improved twin MONOS memory device and its fabrication. The ONO layer is self-aligned to the control gate horizontally. The vertical insulator between the control gate and the word gate does not include a nitride layer. This prevents the problem of electron trapping. The device can be fabricated to pull the electrons out through either the top or the bottom oxide layer of the ONO insulator. The device also incorporates a raised memory bit diffusion between the control gates to reduce bit resistance. The twin MONOS memory array can be embedded into a standard CMOS circuit by the process of the present invention.
REFERENCES:
patent: 5408115 (1995-04-01), Chang
patent: 6040995 (2000-03-01), Reisinger et al.
patent: 6248633 (2001-06-01), Ogura et al.
patent: 6255166 (2001-07-01), Ogura et al.
patent: 6356482 (2002-03-01), Derhacobian et al.
patent: 6413821 (2002-07-01), Ebina et al.
patent: 6469935 (2002-10-01), Hayashi
patent: 6498377 (2002-12-01), Lin et al.
patent: 6531350 (2003-03-01), Satoh et al.
patent: 6759290 (2004-07-01), Ogura et al.
S. Minami et al., “A Novel MONOS Nonvolatile Memory Device Ensuring 10-Year Date Retention after 107Erase/Write Cycles”,IEEE Trans. on Electron Device, vol. 40, No. 11, Nov. 1993, pp. 2011-2017.
E.Suzuki et al., “Hole and Electron Current Transport in Metal-Oxide-Nitride-Oxide-Silicon Memory Structures”,IEEE Trans. on Electron Device, vol. 36, No. 6, Jun. 1989, pp. 1145-1149.
T.Y. Chan et al., “A True Single-Transistor Oxide-Nitride-Oxide EEPROM Device”, IEEE Electron Device Letters, vol. EDL-8, No. 3, Mar. 1987.
Kuo-Tung Chang et al., “A New SONOS Memory Using Source-Side Injection for Programming”, IEEE Electron Device Letters, vol. 19, No. 7, Jul. 1998.
Paulo Cappelletti et al., “Flash Memories,” Klawer Academic Publishers 1999, pp. 217-223.
Ogura Seiki
Saito Tomoya
Satoh Kimihiro
Ackerman Stephen B.
Dang Trung
Halo LSI, Inc.
Pike Rosemary L.S.
Saile George O.
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