Tunneling technology for reducing intra-conductive layer capacit

Details Tunneling technology for reducing intra-conductive layer capacit Tunneling technology for reducing intra-conductive layer capacit

1996-11-06

1998-12-01

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438668, 438700, H01L 21441

Patent

active

058438360

ABSTRACT:
The control speed of semiconductor circuitry is increased by forming air tunnels in the interwiring spaces of a conductive pattern to reduce intra-conductive layer capacitance.

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