Tunnel-junction structures and methods

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S264000

Reexamination Certificate

active

06821848

ABSTRACT:

TECHNICAL FIELD
This invention relates to integrated circuits including memory structures and relates to methods for fabricating such integrated circuits and memory structures and, more particularly, relates to structures including tunnel junctions and methods for fabricating and using such tunnel-junction structures.
BACKGROUND
As computer and other electrical equipment prices continue to drop, the manufacturers of storage devices, such as memory devices and hard drives, are forced to lower the cost of their components. At the same time, markets for computers, video games, televisions and other electrical devices are requiring increasingly larger amounts of memory to store images, photographs, videos, movies, music, and other storage intensive data. Thus, besides reducing costs, manufacturers of storage devices must also increase the storage density of their devices. This trend of increasing memory storage density while reducing costs required to create the storage has been on-going for many years, and even optical storage such as CD-ROM, CD-R, CD-RIW, DVD, and DVD-R variants are being challenged by device size limitations and costs. There is accordingly a need for economical, high capacity memory structures and economical methods for fabricating such structures, especially methods that are compatible with methods used to fabricate other elements of integrated circuits.


REFERENCES:
patent: 5150019 (1992-09-01), Thomas et al.
patent: 5572042 (1996-11-01), Thomas et al.
patent: 5713774 (1998-02-01), Thomas et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Tunnel-junction structures and methods does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Tunnel-junction structures and methods, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tunnel-junction structures and methods will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3360732

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.