Tunnel insulating layer of flash memory device and method of...

Details Tunnel insulating layer of flash memory device and method of... Tunnel insulating layer of flash memory device and method of...

2008-12-29

2010-12-07

Prenty, Mark (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S263000, C438S594000

Reexamination Certificate

active

07846797

ABSTRACT:
The present invention discloses a tunnel insulating layer in a flash memory device and a method of forming the same, the method according to the present invention comprises the steps of forming a first oxide layer on a semiconductor substrate through a first oxidation process; forming a nitride layer on an interface between the semiconductor substrate and the first oxide layer through a first nitridation process; forming a second nitride layer on the first oxide layer through a second nitridation process; forming a second oxide layer on the second nitride layer through a second oxidation process; and forming a third nitride layer on the second oxide layer through a third nitridation process.

REFERENCES:
patent: 2006/0166440 (2006-07-01), Kaneoka et al.
patent: 2007/0018231 (2007-01-01), Mitani et al.
patent: 10-2004-0019986 (2004-03-01), None
patent: 10-2005-0039339 (2005-04-01), None

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