Tungsten silicide etch process selective to photoresist and oxid

Details Tungsten silicide etch process selective to photoresist and oxid Tungsten silicide etch process selective to photoresist and oxid

1992-12-23

1994-08-16

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 156657, 156643, 156646, 156662, H01L 2100

Patent

active

053383982

ABSTRACT:
A process for etching tungsten silicide on a semiconductor wafer in a vacuum etch chamber in the presence of a plasma is described using chlorine (Cl.sub.2) and oxygen-bearing etchant gases in a ratio of not more that 20 volume % oxygen-bearing etchant gas, and preferably from about 6 to about 10 volume % oxygen-bearing etchant gas. The process is also capable of etching polysilicon and exhibits a high selectivity for both photoresist and oxide.

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Lum, Robert T., et al., "Precision 5000 Etch: Tungsten Silicide Process Capability", Etch News, vol. VII, No. 1, Spring 1990, p. 1-18.

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