Tungsten-nitride for contact barrier application

Details Tungsten-nitride for contact barrier application Tungsten-nitride for contact barrier application

1999-07-15

2000-07-25

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438648, 438653, 438664, H01L 214763

Patent

active

060936428

ABSTRACT:
A contact and method of forming a contact. A layer of titanium (112) is deposited. Then, a RTP anneal is performed to react the titanium layer (112) with underlying silicon (112) to form a silicide layer (114). After the RTP anneal, a layer of tungsten-nitride (116) is deposited as a barrier layer. The metal interconnect layer (118) is then formed over the tungsten-nitride layer (116).

REFERENCES:
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patent: 5567647 (1996-10-01), Takahashi
patent: 5591671 (1997-01-01), Kim et al.
patent: 5633200 (1997-05-01), Hu
patent: 5654235 (1997-08-01), Matsumoto et al.
patent: 5723362 (1998-03-01), Inoue et al.

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