Tungsten etch process with high selectivity to photoresist

Details Tungsten etch process with high selectivity to photoresist Tungsten etch process with high selectivity to photoresist

1989-10-20

1990-08-14

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156626, 156646, 156656, 1566591, 20419233, 20419235, 252 791, B44C 122, C23F 102, C03C 1500, C03C 2506

Patent

active

049484621

ABSTRACT:
A process is disclosed for the etching of a tungsten layer on a semiconductor wafer through a photoresist mask to form a pattern of tungsten lines on the wafer. The process is characterized by a high selectivity to photoresist material and resistance to lateral etching or undercutting of the tungsten beneath the photoresist mask resulting in good profile control, i.e., low critical dimension loss in the etched tungsten pattern. The process comprises flowing SF.sub.6, N.sub.2, Cl.sub.2 gases into an etch chamber while maintaining a plasma in the chamber. In a preferred embodiment, the wafer in the etch chamber is immersed in a magnetic field during the etch to further enhance the selectivity of the etch to photoresist.

REFERENCES:
patent: 4491499 (1985-01-01), Jerde et al.
patent: 4579623 (1986-04-01), Suzuki et al.
patent: 4609426 (1986-09-01), Ogawa et al.
patent: 4713141 (1987-12-01), Tsang
patent: 4842683 (1989-06-01), Cheng et al.

Affiliated with

Also associated with

Rating

Tungsten etch process with high selectivity to photoresist does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Tungsten etch process with high selectivity to photoresist, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tungsten etch process with high selectivity to photoresist will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-460620