Tungsten absorber for x-ray mask

X-ray or gamma ray systems or devices – Specific application – Lithography

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378210, G21K 500

Patent

active

057578796

ABSTRACT:
An damascene x-ray mask comprises an oxide membrane layer having trenches formed therein defining an x-ray mask pattern. The trenches are filled with collimated, sputtered tungsten sputtered in a relatively high pressure environment. The result is a dense, low stress tungsten film completely filling the trenches. Damascene refers to the process by which the mask is formed. The mask is formed on a silicon substrate and then the substrate is etched away from the bottom side leaving substantially just the oxide layer and the collimated tungsten. The oxide layer is transparent to x-rays and the collimated tungsten layer is opaque to x-rays.

REFERENCES:
patent: 3654110 (1972-04-01), Kraus
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patent: 4824544 (1989-04-01), Mikalesen et al.
patent: 5043586 (1991-08-01), Giuffre et al.
patent: 5188706 (1993-02-01), Hori et al.
patent: 5457006 (1995-10-01), Kerokane et al.
"High-resolution and high-fidelity x-ray mask structure employing embedded absorbers"; S.Y. Chou et al.; J. Vac. Science, Nov./Dec. 1988.
"EB Proximity Printer With Increased Throughput"; K. Asch et al.; IBM Technical Disclosure Bulletin; vol. 26, No. 2, Jul. 1983.

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