Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-05-08
2010-11-16
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S454000, C257S621000, C257SE21237, C257SE21499, C257SE21597, C257SE21705, C257SE23004, C257SE23008, C257SE23011
Reexamination Certificate
active
07833895
ABSTRACT:
A method for fabricating ICs including via-first through substrate vias (TSVs) and ICs and electronic assemblies therefrom. A substrate having a substrate thickness including a top semiconductor surface and a bottom surface is provided including at least one embedded TSV including a dielectric liner and an electrically conductive filler material formed on the dielectric liner. A portion of the bottom surface of the substrate is mechanically removed to approach but not reach the embedded TSV tip. A protective substrate layer having a protective layer thickness remains over the tip of the embedded TSV after the mechanical removing. Chemical etching exclusive of mechanical etching for removing the protective substrate layer is used form an integral TSV tip that has an exposed tip portion that generally protrudes from the bottom surface of the substrate. The chemical etching is generally a three step chemical etch.
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Bonifield Thomas D.
Eissa Mona M.
Goodlin Brian E.
Brady III Wade J.
Jones Eric W
Le Thao X
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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