Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Patent
1993-01-21
1996-03-19
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
36518908, 36518909, 36518911, 365227, 326 27, 326 57, G11C 700
Patent
active
055008178
ABSTRACT:
The invention is a circuit and method for providing a true tristate output at an output pad of a serial access memory device. The invention drives three distinct potentials to the output pad, two of which are potentials having high and low logic levels. The third potential, also referred to as the midrange potential, is a potential within a range of potentials defined by the potentials having the high and low logic levels. In an ideal case this potential is a midpoint potential midway between the potentials of the high and low logic level. The potential at the output pad is sensed by a sense circuit. The sense circuit creates a sense signal. Logic circuitry enabled by a one shot generator responds to the sense signal and disables the NOR function of an enable NOR gate and drives the output of the enable NOR gate to a potential that activates an output buffer. The output buffer drives the output pad to the desired midrange potential.
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1992 DRAM Data Book, Micron Semiconductor, Inc., pp. 5-111 through 5-154.
Collier Susan B.
Micro)n Technology, Inc.
Nelms David C.
Tran Andrew Q.
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