Trenched semiconductor devices and their manufacture

Details Trenched semiconductor devices and their manufacture Trenched semiconductor devices and their manufacture

2006-04-25

2006-04-25

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S589000, C438S619000

Reexamination Certificate

active

07033889

ABSTRACT:
In semiconductor devices which include an insulated trench electrode (11) in a trench (20), for example, trench-gate field effect power transistors and trenched Schottky diodes, a cavity (23) is provided between the bottom (25) of the trench electrode (11) and the bottom (27) of the trench (20) to reduce the dielectric coupling between the trench electrode (11) and the body portion at the bottom (27) of the trench in a compact manner. In power transistors, the reduction in dielectric coupling reduces switching power losses, and in Schottky diodes, it enables the trench width to be reduced.

REFERENCES:
patent: 5250450 (1993-10-01), Lee et al.
patent: 5612567 (1997-03-01), Baliga
patent: 5637898 (1997-06-01), Baliga
patent: 6413827 (2002-07-01), Farrar
patent: 6472719 (2002-10-01), Lin et al.
patent: 6495900 (2002-12-01), Mouli et al.
patent: 6498382 (2002-12-01), Hirler et al.
patent: 6576953 (2003-06-01), Hirler
patent: 6680237 (2004-01-01), Chen et al.
patent: WO0108226 (2001-02-01), None
“Power Semiconductor Devices” by B. Jayant Baliga, PWS Publishing Company; pp. 387 to 395, 1992.

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