Trenched power semiconductor structure with schottky diode...

Details Trenched power semiconductor structure with schottky diode... Trenched power semiconductor structure with schottky diode...

2011-08-09

2011-08-09

Geyer, Scott B (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S570000, C257S476000

Reexamination Certificate

active

07994001

ABSTRACT:
A fabrication method of a trenched power semiconductor structure with a schottky diode is provided. Firstly, a drain region is formed in a substrate. Next, at least two gate structures are formed above the drain region, and then, a body and at least a source region are formed between the two adjacent gate structures. Thereafter, a first dielectric structure is formed on the gate structure to shield the gate structure. Then, a contact window is formed in the body and has side surface thereof adjacent to the source region to expose the source region. Afterward, a second dielectric structure is formed in the contact window. Next, by using the second dielectric structure as an etching mask, the body is etched to form a narrow trench extending to the drain region below the body. Finally, a metal layer is filled into the contact window and the narrow trench.

REFERENCES:
patent: 6251730 (2001-06-01), Luo
patent: 6621107 (2003-09-01), Blanchard et al.
patent: 7564097 (2009-07-01), Ono et al.
patent: 2009/0065855 (2009-03-01), Bhalla et al.
patent: 2009/0224316 (2009-09-01), Bhalla et al.
patent: 2009/0305475 (2009-12-01), Hshieh
patent: 2009/0315106 (2009-12-01), Hsieh

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