Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-10
2010-10-19
Lee, Eugene (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S328000, C257S329000, C257S341000, C257S401000, C257SE29027, C257SE29028
Reexamination Certificate
active
07816729
ABSTRACT:
A trenched semiconductor power device that includes a trenched gate disposed in an extended continuous trench surrounding a plurality of transistor cells in an active cell area and extending as trench-gate fingers to intersect with a trenched gate under the gate metal runner at a termination area. At least one of the trench-gate fingers intersects with the trenched gate under the gate metal runner near the termination area having trench intersection regions vulnerable to have a polysilicon void and seam developed therein. At least a gate contact trench opened through an insulation layer covering the semiconductor power device wherein the gate contact trench penetrating from the insulation layer and extending into the gate polysilicon and the gate contact trench is opened in an area away from the trench intersection regions and also away from a center portion of said the trenched gate underneath said gate runner metal where a polysilicon void or a seam is likely formed thus avoid the formation of the vulnerable spots.
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Quirk et al., Semiconductor Manufacturing Technology, 2001, Prentice Hall, pp. 216-217, 312.
Gumedzoe Peniel M
Lee Eugene
Lin Bo-In
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