Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2007-08-28

2010-10-19

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21654

Reexamination Certificate

active

07816730

ABSTRACT:
A semiconductor device comprises a fin-type active region defined by a semiconductor substrate having a device isolation structure, a recess formed over the fin-type active region, and a gate electrode including a silicon germanium (Si1-xGex) layer for fill the recess (where 0<X<1 and X is a Ge mole fraction).

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Ponomarev, Y., “High-Performance Deep SubMicron CMOS Technologies with Polycrystalline-SiGe Gates,”IEEE Transactions on Electron Devices, 47:4 (Apr. 2000).

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