Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-03-30
2000-08-01
Clark, Sheila V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257332, 257333, H01L 2976, H01L 2994, H01L 27108
Patent
active
060970618
ABSTRACT:
A Metal Oxide Semiconductor (MOS) transistor and method for improving device scaling comprises a trenched polysilicon gate formed within a trench etched in a semiconductor substrate and further includes a source region, a drain region, and a channel region. The source and drain region are laterally separated by the trench in which the trenched polysilicon gate is formed and partially extend laterally beneath the bottom surface of the trench. The channel region is formed in the silicon substrate beneath the bottom surface of the trench. In one embodiment, the top surface of the trenched polysilicon gate is substantially planar to the substrate surface. In another embodiment, the top surface and a portion of the trenched polysilicon gate are disposed above the substrate surface.
REFERENCES:
patent: 5016067 (1991-05-01), Mori
patent: 5378655 (1995-01-01), Hutchings et al.
patent: 5705415 (1998-01-01), Orlowski et al.
patent: 5770878 (1998-06-01), Beasom
patent: 5773343 (1998-06-01), Lee et al.
patent: 5883399 (1999-03-01), Yin et al.
patent: 5953602 (1999-09-01), Oh et al.
Liu Yowjuang W.
Wollesen Donald L.
Advanced Micro Devices , Inc.
Clark Sheila V.
LandOfFree
Trenched gate metal oxide semiconductor device and method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Trenched gate metal oxide semiconductor device and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trenched gate metal oxide semiconductor device and method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-666543