Trench-type MOSFET having a reduced device pitch and...

Details Trench-type MOSFET having a reduced device pitch and... Trench-type MOSFET having a reduced device pitch and...

2006-02-28

2006-02-28

Tran, Minh-Loan (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S272000, C438S273000, C438S274000, C438S589000

Reexamination Certificate

active

07005352

ABSTRACT:
A trench-type lateral power MOSFET is manufactured by forming an n−-type diffusion region, which will be a drift region, on a p−-type substrate; selectively removing a part of substrate and a part of n−-type diffusion region to form trenches; forming a gate oxide film of 0.05 μm in thickness in each trench; forming a polycrystalline silicon gate layer on gate oxide film; forming a p−-type base region and an n+-type diffusion region, which will be a source region, in the bottom of each trench; and forming an n+-type diffusion region, which will be a drain region, in the surface portion of n−-type diffusion region. The MOSFET has reduced device pitch, a reduced on-resistance per unit area and a simplified manufacturing process.

REFERENCES:
patent: 5122848 (1992-06-01), Lee et al.
patent: 6316807 (2001-11-01), Fujishima et al.
patent: 6624470 (2003-09-01), Fujishima
patent: 6639274 (2003-10-01), Fujishima
patent: 6664163 (2003-12-01), Fujishima et al.
patent: 6781197 (2004-08-01), Fujishima et al.
patent: 11-224950 (1999-08-01), None
“A 0.35 μm CMOS based smart power technology for 7V-50V applications”; V. Parthasarathy et al.; ISPSD'2000 Copyright 2000 by the IEEE; Catalog No. 00CH37094C; 4 pages.
Xu, Shuming et al.; “Bidirectional LIGBT on SOI Substrate with High Frequency and High Temperature Capability”; 1997, IEEE, pp. 37-40.

Affiliated with

Also associated with

Rating

Trench-type MOSFET having a reduced device pitch and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench-type MOSFET having a reduced device pitch and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench-type MOSFET having a reduced device pitch and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3707978