Trench Schottky device with single barrier

Details Trench Schottky device with single barrier Trench Schottky device with single barrier

2006-10-17

2011-10-18

Reames, Matthew (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S570000, C438S534000, C257SE21351, C257SE21359

Reexamination Certificate

active

08039328

ABSTRACT:
A process for forming a trench Schottky barrier device includes the forming of an oxide layer within the trenches in the surface of a silicon wafer, and then depositing a full continuous metal barrier layer over the full upper surface of the wafer including the trench interiors and the mesas between trenches with a barrier contact made to the mesas only. Palladium, titanium or any conventional barrier metal can be used.

REFERENCES:
patent: 4398344 (1983-08-01), Gould
patent: 5365102 (1994-11-01), Mehrotra et al.
patent: 2002/0179993 (2002-12-01), Hshieh et al.
patent: 1520615 (2004-08-01), None

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