Trench Schottky barrier diode

Details Trench Schottky barrier diode Trench Schottky barrier diode

2005-02-15

2005-02-15

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S570000, C438S576000, C438S582000, C438S583000, C438S963000

Reexamination Certificate

active

06855593

ABSTRACT:
A fabrication process for a Schottky barrier structure includes forming a nitride layer directly on a surface of an epitaxial (“epi”) layer and subsequently forming a plurality of trenches in the epi layer. The interior walls of the trenches are then deposited with a final oxide layer without forming a sacrificial oxide layer to avoid formation of a beak bird at the tops of the interior trench walls. A termination trench is etched in the same process step for forming the plurality of trenches in the active area.

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